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| SI4926DY New Product Vishay Siliconix Asymmetrical Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.0125 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A) 6.3 5.4 10.5 9.0 D1 D2 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D2 D2 D2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel 1 Parameter P Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Channel 2 10 secs 30 20 Symbol S bl VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State Steady State Unit Ui V 6.3 5.4 30 1.3 1.4 0.9 5.3 4.2 10.5 8.5 40 7.5 6.0 A 0.9 1.0 0.64 -55 to 150 2.2 2.4 1.5 1.15 1.25 0.80 W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel 1 Parameter P Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71143 S-00238--Rev. A, 21-Feb-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady-State Steady-State Channel 2 Typ 43 82 25 Symbol S bl RthJA RthJC Typ 72 100 51 Max 90 125 63 Max 53 100 30 Unit Ui _C/W 2-1 SI4926DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 24 V, VGS = 0 V Z G Vl DiC Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 6.3 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = 10 V, ID = 10.5 A VGS = 4.5 V, ID = 5.4 A VGS = 4.5 V, ID = 9.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 15 V, ID = 6.3 A VDS = 15 V, ID = 10.5 A IS = 1.3 A, VGS = 0 V IS = 2.2 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 30 0.018 0.0105 0.024 0.0135 17 28 0.7 0.72 1.1 1.1 0.022 0.0125 0.030 0.017 S W 0.8 0.8 100 100 1 1 15 15 A A mA V Symbol Test Condition Min Typ Max Unit Gate-Body Leakage nA V Dynamicb Total Gate Charge Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.3 A, di/dt = 100 A/ms IF = 2.2 A, di/dt = 100 mA/ms Channel 1 Ch l Channel-1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel-2 VDD = 15 V RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel 1 Channel-1 Ch l VDS = 15 V, VGS = 5 V, ID = 6.3 A Channel-2 V, VDS = 15 V VGS = 5 V, ID = -10.5 A V 10 5 Gate-Drain Charge Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 8.0 18 1.75 3.6 3.2 7.8 10 13 5 10 26 37 8 27 30 35 20 30 10 20 50 80 16 50 60 70 ns 12 25 nC C Gate-Source Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71143 S-00238--Rev. A, 21-Feb-00 SI4926DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 4 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Vishay Siliconix CHANNEL 1 Transfer Characteristics 18 3V 18 12 12 TC = 125_C 6 25_C 6 1V 0 0 2 4 6 8 10 2V -55_C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 1000 Capacitance DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.04 800 Ciss 600 0.03 VGS = 4.5 V 0.02 VGS = 10 V 400 Coss 200 Crss r 0.01 0 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 6.3 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Document Number: 71143 S-00238--Rev. A, 21-Feb-00 0.4 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 6.3 A 6 4 2 r DS(on) - On-Resistance (W) (Normalized) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-3 SI4926DY Vishay Siliconix New Product CHANNEL 1 On-Resistance vs. Gate-to-Source Voltage 0.10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 DS(on) - On-Resistance ( W ) 0.08 I S - Source Current (A) TJ = 150_C 10 0.06 TJ = 25_C 0.04 ID = 6.3 A 0.02 r 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 0.4 V GS(th) Variance (V) 0.2 -0.0 -0.2 -0.4 -0.6 20 -0.8 -1 -50 0 -25 0 25 50 75 100 TJ - Temperature (_C) 125 150 ID = 250 mA Power (W) 80 100 Single Pulse Power, Junction-to-Ambient 60 40 0.001 0.01 0.1 Time (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71143 S-00238--Rev. A, 21-Feb-00 SI4926DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Vishay Siliconix CHANNEL 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 4 V 32 I D - Drain Current (A) 3V 24 I D - Drain Current (A) 32 40 CHANNEL 2 Transfer Characteristics 24 16 16 TC = 125_C 8 25_C -55_C 0 8 1, 2 V 0 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.030 2000 Capacitance r DS(on) - On-Resistance ( W ) 0.024 C - Capacitance (pF) 1600 Ciss 1200 0.018 VGS = 4.5 V 0.012 VGS = 10 V 800 Coss 0.006 400 Crss 0 0 8 16 24 32 40 0 0 6 12 18 24 30 ID - Drain Current (A) Document Number: 71143 S-00238--Rev. A, 21-Feb-00 VDS - Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2-5 SI4926DY Vishay Siliconix New Product CHANNEL 2 On-Resistance vs. Junction Temperature 1.8 VDS = 15 V ID = 10.5 A VGS = 10 V ID = 10.5 A TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 10 V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance (W) (Normalized) 12 18 24 30 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 6 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.06 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 DS(on) - On-Resistance ( W ) 0.05 I S - Source Current (A) 0.04 0.03 TJ = 25_C 0.02 ID = 10.5 A r 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 100 Single Pulse Power, Junction-to-Ambient 0.2 V GS(th) Variance (V) ID = 250 mA Power (W) -0.0 80 60 -0.2 40 -0.4 20 -0.6 -0.8 -50 0 -25 0 25 50 75 100 TJ - Temperature (_C) 125 150 0.001 0.01 0.1 Time (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 71143 S-00238--Rev. A, 21-Feb-00 SI4926DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix CHANNEL 2 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 82_C/W 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71143 S-00238--Rev. A, 21-Feb-00 www.vishay.com S FaxBack 408-970-5600 2-7 |
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